A DRAM system for consistently reducing CPU wait cycles

Y. Kanno, H. Mizuno, T. Watanabe
{"title":"A DRAM system for consistently reducing CPU wait cycles","authors":"Y. Kanno, H. Mizuno, T. Watanabe","doi":"10.1109/VLSIC.1999.797261","DOIUrl":null,"url":null,"abstract":"This paper describes a DRAM system for consistently reducing CPU wait cycles for an access to DRAMs in a cache-based memory hierarchy. An arithmetical address mapping circuitry and a pseudo dual-port DRAM access protocol provide a DRAM access without a bank conflict and high speed write-back accesses (write for dirty data and read for cache-line filling). Only two adders for the address mapping circuitry and a data-preload register in each DRAM are necessary for the implementation.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1999.797261","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

This paper describes a DRAM system for consistently reducing CPU wait cycles for an access to DRAMs in a cache-based memory hierarchy. An arithmetical address mapping circuitry and a pseudo dual-port DRAM access protocol provide a DRAM access without a bank conflict and high speed write-back accesses (write for dirty data and read for cache-line filling). Only two adders for the address mapping circuitry and a data-preload register in each DRAM are necessary for the implementation.
一种持续减少CPU等待周期的DRAM系统
本文描述了一种在基于缓存的存储器层次结构中持续减少访问DRAM的CPU等待周期的DRAM系统。算术地址映射电路和伪双端口DRAM访问协议提供了没有银行冲突的DRAM访问和高速回写访问(写脏数据和读缓存线填充)。该实现只需要用于地址映射电路的两个加法器和每个DRAM中的一个数据预加载寄存器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信