High Power Monolithic pHemt GaAs Limiter for T/R Module

B. Pham, Duy P. Nguyen, A. Pham, Phong D. Le
{"title":"High Power Monolithic pHemt GaAs Limiter for T/R Module","authors":"B. Pham, Duy P. Nguyen, A. Pham, Phong D. Le","doi":"10.1109/CSICS.2016.7751041","DOIUrl":null,"url":null,"abstract":"In this paper, a high power monolithic GaAs limiter for transmit/receive module is presented. While keeping the output power below 100 mW (20 dBm), this limiter can sustain a RF input power up to 4 Watts (36 dBm). The survival input power of this limiter can get up to 10 Watts (40 dBm). This chip obtains a wide bandwidth from 7 to 21 GHz. Within this band, the chip has the insertion loss lower than 2.3 dB and achieves only 1 dB insertion loss in the X-Band from 7 GHz to 12 GHz.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2016.7751041","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

In this paper, a high power monolithic GaAs limiter for transmit/receive module is presented. While keeping the output power below 100 mW (20 dBm), this limiter can sustain a RF input power up to 4 Watts (36 dBm). The survival input power of this limiter can get up to 10 Watts (40 dBm). This chip obtains a wide bandwidth from 7 to 21 GHz. Within this band, the chip has the insertion loss lower than 2.3 dB and achieves only 1 dB insertion loss in the X-Band from 7 GHz to 12 GHz.
用于T/R模块的高功率单片金属砷化镓限幅器
本文介绍了一种用于发射/接收模块的高功率单片砷化镓限幅器。在保持输出功率低于100 mW (20 dBm)的同时,该限制器可以维持高达4瓦(36 dBm)的射频输入功率。该限幅器的生存输入功率可达10瓦(40 dBm)。该芯片的带宽为7 ~ 21 GHz。在该频段内,芯片的插入损耗低于2.3 dB,在7 GHz至12 GHz的x频段内,芯片的插入损耗仅为1 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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