{"title":"High Power Monolithic pHemt GaAs Limiter for T/R Module","authors":"B. Pham, Duy P. Nguyen, A. Pham, Phong D. Le","doi":"10.1109/CSICS.2016.7751041","DOIUrl":null,"url":null,"abstract":"In this paper, a high power monolithic GaAs limiter for transmit/receive module is presented. While keeping the output power below 100 mW (20 dBm), this limiter can sustain a RF input power up to 4 Watts (36 dBm). The survival input power of this limiter can get up to 10 Watts (40 dBm). This chip obtains a wide bandwidth from 7 to 21 GHz. Within this band, the chip has the insertion loss lower than 2.3 dB and achieves only 1 dB insertion loss in the X-Band from 7 GHz to 12 GHz.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2016.7751041","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
In this paper, a high power monolithic GaAs limiter for transmit/receive module is presented. While keeping the output power below 100 mW (20 dBm), this limiter can sustain a RF input power up to 4 Watts (36 dBm). The survival input power of this limiter can get up to 10 Watts (40 dBm). This chip obtains a wide bandwidth from 7 to 21 GHz. Within this band, the chip has the insertion loss lower than 2.3 dB and achieves only 1 dB insertion loss in the X-Band from 7 GHz to 12 GHz.