A design guide for 3-stage CMOS nested Gm-C operational amplifier with area or current minimization

Jae-Seung Lee, J. Sim, Hong-June Park
{"title":"A design guide for 3-stage CMOS nested Gm-C operational amplifier with area or current minimization","authors":"Jae-Seung Lee, J. Sim, Hong-June Park","doi":"10.1109/SOCDC.2008.4815671","DOIUrl":null,"url":null,"abstract":"A systematic design guide for 3-stage CMOS operational amplifier (op amp) with nested Gm-C frequency compensation (NGCC) was proposed. With the given specification such as gain-bandwidth (GB), the ratio of high frequency pole to GB, phase margin, input common-mode range, and load capacitance, the guide generates the design parameters that minimize total area or current. The test chip designed by the proposed guide was fabricated with a 0.18-mum CMOS process. The simulation results show reasonable performances with 1.2-V supply voltage, and the measurement results show low-voltage operations of the designed op amps with 0.6-V supply voltage.","PeriodicalId":405078,"journal":{"name":"2008 International SoC Design Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International SoC Design Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCDC.2008.4815671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A systematic design guide for 3-stage CMOS operational amplifier (op amp) with nested Gm-C frequency compensation (NGCC) was proposed. With the given specification such as gain-bandwidth (GB), the ratio of high frequency pole to GB, phase margin, input common-mode range, and load capacitance, the guide generates the design parameters that minimize total area or current. The test chip designed by the proposed guide was fabricated with a 0.18-mum CMOS process. The simulation results show reasonable performances with 1.2-V supply voltage, and the measurement results show low-voltage operations of the designed op amps with 0.6-V supply voltage.
一个设计指南的3级CMOS嵌套Gm-C运算放大器与面积或电流最小化
提出了一种嵌套Gm-C频率补偿(NGCC)的3级CMOS运算放大器的系统设计指南。根据给定的规格,如增益带宽(GB)、高频极与GB的比值、相位裕度、输入共模范围和负载电容,导轨产生使总面积或电流最小的设计参数。利用该波导设计的测试芯片采用0.18 μ m CMOS工艺制作。仿真结果表明,该运放在1.2 v供电电压下性能良好,测量结果表明,该运放在0.6 v供电电压下可以实现低电压工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信