GaN based Junctionless Double Surrounding Gate (JLDSG) MOSFET for high power, high voltage and high frequency applications

2016 Asia-Pacific Microwave Conference (APMC) Pub Date : 2016-12-01 DOI:10.1109/APMC.2016.7931265

Sonam Rewari, V. Nath, S. Haldar, S. Deswal, R. Gupta

引用次数: 1

Abstract

In this paper GaN based JLDSG MOSFET has been analyzed for the time for different channel lengths (L = 18 nm, 24 nm, 30 nm) for its high power (HP), high voltage (HV) and high frequency operation. The performance of JLDSG MOSFET has been compared with conventional Junctionless Surrounding Gate (JLSG) MOSFET. It is found that JLDSG MOSFET poses high drain current, transconductance, Subthreshold Slope, Transconductance Generation Factor (TGF), cut off frequency (fT), Maximum Transducer Power Gain (MTPG) and Unilateral Power Gain (UPG).

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基于氮化镓的无结双环绕门(JLDSG) MOSFET，适用于高功率、高压和高频应用

本文分析了GaN基JLDSG MOSFET在不同通道长度(L = 18 nm, 24 nm, 30 nm)下的高功率(HP)，高电压(HV)和高频工作时间。将JLDSG MOSFET的性能与传统的无结环栅(JLSG) MOSFET进行了比较。研究发现，JLDSG MOSFET具有高漏极电流、跨导、亚阈值斜率、跨导产生因子(TGF)、截止频率(fT)、最大传感器功率增益(MTPG)和单边功率增益(UPG)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 Asia-Pacific Microwave Conference (APMC)

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