A 30kW Three-Phase Voltage Source Inverter Based on The Si IGBT/SiC MOSFET Hybrid Switch

Abstract

Hybrid switch (HyS) consisting of the paralleled silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs) and silicon (Si) insulated gate bipolar transistors (IGBTs) is proposed for high switching frequency and high efficiency at a reasonable cost. In this paper, a compact HyS three-phase full-bridge power module, rated at 1200 V/200 A, was fabricated in house and fully tested for the first time. To minimize HyS power loss, the turn-on gate signals are applied to the Si IGBTs and the SiC MOSFETs simultaneously while a prior turn-off period exists between the turn-off gate signals of the Si IGBTs and the SiC MOSFETs. The prior turn-off period is selected through the double pulse test. Based on the HyS power module, a 30 kW three-phase voltage source inverter was developed.