An ASIC design methodology with predictably low leakage, using leakage-immune standard cells

N. Jayakumar, S. Khatri
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引用次数: 9

Abstract

In this paper we introduce a low-leakage standard cell based ASIC design methodology which is based on the use of modified standard cells. These cells are designed to consume extremely low and predictable leakage currents in standby mode. For each cell in a standard cell library, we design two low-leakage variants of the cell. If the inputs of a cell during the standby mode of operation are such that the output has a high value, we minimize the leakage in the pull-down network, and vice versa. While technology mapping a circuit, we determine the particular variant to utilize in each instance, so as to minimize leakage of the final mapped design. We have designed and laid out our modified standard cells, and have performed experiments to compare placed-and-routed area, leakage and delays of our method against MTCMOS and a straightforward ASIC flow. Each design style we compare utilizes the same base standard cell library. Our results show that designs obtained using our methodology have better speed and area characteristics than designs implemented in MTCMOS. The exact leakage current obtained for MTCMOS is highly unpredictable, while our method exhibits leakage currents which are precisely estimable. The leakage current for HL designs can be dramatically lower than the worst-case leakage of MTCMOS based designs, and two orders of magnitude compared to traditional standard cells. Also, a design implemented in MTCMOS would require the use of separate power and ground supplies for latches and combinational logic, while our methodology does away with such a requirement.
一种ASIC设计方法,具有可预测的低泄漏,使用泄漏免疫标准细胞
本文介绍了一种基于改进标准单元的低漏标准单元的专用集成电路设计方法。这些电池被设计成在待机模式下消耗极低且可预测的泄漏电流。对于标准单元库中的每个单元,我们设计了两个低泄漏的单元变体。如果一个电池在待机模式下的输入使得输出有一个高值,我们就可以最小化下拉网络中的漏电,反之亦然。当技术映射电路时,我们确定在每个实例中使用的特定变体,以最大限度地减少最终映射设计的泄漏。我们设计并布置了改进的标准单元,并进行了实验,将我们的方法与MTCMOS和简单的ASIC流的放置和路由面积,泄漏和延迟进行了比较。我们比较的每种设计风格都使用相同的基本标准单元库。我们的研究结果表明,使用我们的方法获得的设计比在MTCMOS中实现的设计具有更好的速度和面积特性。MTCMOS的精确泄漏电流是高度不可预测的,而我们的方法显示的泄漏电流是精确估计的。HL设计的泄漏电流可以显著低于MTCMOS设计的最坏情况泄漏,与传统标准电池相比降低两个数量级。此外,在MTCMOS中实现的设计将需要为锁存器和组合逻辑使用单独的电源和接地电源,而我们的方法则不需要这样的要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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