Design of a Low Power High Speed CML-Based Divide-by-5 Pre-Scaler in 180 nm Process Technology

S. Maity, S. Kumar Jana
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Abstract

A power-efficient high speed MOS current mode logic (MCML)-based divide-by-5 pre-scaler is proposed in this paper. Optimized latches and XOR gates are used in order to design the proposed divide-by-5 pre-scaler. The pre-scaler is realized in 180 nm CMOS process technology and simulation results show that proposed divide-by-5 pre-scaler can faithfully work up to an operating frequency of 12.12 GHz in worst case process corner with an excellent power head performance. The maximum power dissipation of the core circuit is 1.39 mW under 1.8 V supply. The performance corresponds to figure of merit: FoM of 9.4 dB which compares favorably with the state of the art.
180nm制程低功耗高速cmos / 5预缩放器设计
提出了一种基于MOS电流模式逻辑(MCML)的高能效高速预标器。优化锁存器和异或门是为了设计所提出的除以5预标器。在180nm CMOS工艺中实现了该预缩放器,仿真结果表明,该预缩放器在最坏的工艺角下,工作频率可达12.12 GHz,功率头性能优异。在1.8 V电源下,核心电路的最大功耗为1.39 mW。性能符合性能指标:FoM为9.4 dB,与最先进的产品相比是有利的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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