Yong-qiang Jiang, Wei Jiang, L. Gu, Xiaonan Chen, R.T. Chen
{"title":"80-micron Interaction Length Silicon Nano-Photonic Crystal Waveguide Modulator","authors":"Yong-qiang Jiang, Wei Jiang, L. Gu, Xiaonan Chen, R.T. Chen","doi":"10.1109/AOE.2006.307344","DOIUrl":null,"url":null,"abstract":"An ultra-compact silicon electro-optic modulator is experimentally demonstrated based on silicon photonic crystal (PhC) waveguides for the first time to our knowledge. Modulation operation was demonstrated by carrier injection into an 80mum-long silicon PhC waveguide of a Mach-Zehnder interferometer (MZI) structure. The modulation depth operating at 1567 nm is 92%. The pi phase shift driving current, Ipi, across the active region is as low as 0.15 mA, which is equivalent to a Vpi of 7.5 mV when a 50Omega impedance-mate structure is applied","PeriodicalId":356070,"journal":{"name":"2006 Asian Optical Fiber Communication & Optoelectronic Exposition & Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 Asian Optical Fiber Communication & Optoelectronic Exposition & Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AOE.2006.307344","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24
Abstract
An ultra-compact silicon electro-optic modulator is experimentally demonstrated based on silicon photonic crystal (PhC) waveguides for the first time to our knowledge. Modulation operation was demonstrated by carrier injection into an 80mum-long silicon PhC waveguide of a Mach-Zehnder interferometer (MZI) structure. The modulation depth operating at 1567 nm is 92%. The pi phase shift driving current, Ipi, across the active region is as low as 0.15 mA, which is equivalent to a Vpi of 7.5 mV when a 50Omega impedance-mate structure is applied