Investigation of deep level centers in i- and n-layers of GaAs pin - diodes

Abstract

This work presents the results of capacitance-voltage (C-V), current-voltage (I-V) and deep level transient spectroscopy (DLTS) on special Schottky diode samples fabricated on the basis of GaAs p+-pin-n+ structure. It is shown that in the i-layer and n-region bordering the i-layer is observed “anomalous” stationary capacitance temperature change. DLTS spectra analysis allowed to identify the electron trap EL2 and to determine its concentration distribution. Suggested a possible interaction of hole traps A and B with the electron traps EL2.