{"title":"A 3mW continuous-time /spl Sigma//spl Delta/-modulator for EDGE/GSM with high adjacent channel tolerance","authors":"M. Schimper, Lukas Dörrer, E. Riccio, G. Panov","doi":"10.1109/ESSCIR.2004.1356648","DOIUrl":null,"url":null,"abstract":"A continuous-time 4th-order multi-bit /spl Sigma//spl Delta/-modulator for GSM/EDGE is presented. By introduction of a direct feed-forward path from the input to the quantiser, high immunity to adjacent channel interferers is achieved. The dynamic range is 90 dB (>14-bit) over a 240 kHz signal bandwidth. Accurate modelling allows optimisation of excess loop delay, thus yielding a very low power consumption of 3 mW at 1.25 V supply voltage. The modulator is clocked at 26 MHz (oversampling ratio=54). It occupies 0.5 mm/sup 2/ in a 0.13 /spl mu/m CMOS technology.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"39","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356648","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 39
Abstract
A continuous-time 4th-order multi-bit /spl Sigma//spl Delta/-modulator for GSM/EDGE is presented. By introduction of a direct feed-forward path from the input to the quantiser, high immunity to adjacent channel interferers is achieved. The dynamic range is 90 dB (>14-bit) over a 240 kHz signal bandwidth. Accurate modelling allows optimisation of excess loop delay, thus yielding a very low power consumption of 3 mW at 1.25 V supply voltage. The modulator is clocked at 26 MHz (oversampling ratio=54). It occupies 0.5 mm/sup 2/ in a 0.13 /spl mu/m CMOS technology.