A fine pitch COG technique for a TFT-LCD panel using an indium alloy

Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93) Pub Date : 1993-06-01 DOI:10.1109/ECTC.1993.346732

M. Mori, Y. Kizaki, M. Saito, A. Hongu

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引用次数: 16

Abstract

A fine pitch chip-on-glass (COG) bonding technique for liquid crystal display (LCD) panels has been developed. An IC chip with gold bumps was dipped in a stirred indium alloy bath in a nitrogen atmosphere without flux. Shallow-bowl-shaped In alloy bumps were selectively formed on the Au bumps on the IC electrodes. The minimum bump pitch was 50 /spl mu/m, and the bump size was 31 by 31 /spl mu/m. The In alloy bumps whose minimum pitch was 100 /spl mu/m were connected to molybdenum conductors without flux at low pressure (30 gf/bump or less) and low temperature (110/spl deg/C or less). The temperature was lower than the alloy melting point. The mean contact resistance was 0.78 /spl Omega/. It was found that the calculation of the minimum bump pitch for the bump sizes and the In alloy bump height is useful for designing new ICs with fine pitch bumps. It has been demonstrated through a thermal shock test (TST), a high temperature and high-humidity storage test; and a high-temperature storage test that the contact resistance changes satisfied the specification. Prototype TFT-LCD panels with 80-/spl mu/m pitch driver ICs were successfully developed.<>

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使用铟合金的TFT-LCD面板的细间距COG技术

提出了一种用于液晶显示(LCD)面板的小间距玻璃晶片(COG)键合技术。将带有金凸起的集成电路芯片在无助熔剂的氮气气氛中浸泡在搅拌铟合金浴中。在IC电极上的Au凸起上选择性地形成浅碗状的In合金凸起。最小凹凸间距为50 /磅亩/米，凹凸大小为31 × 31 /磅亩/米。将最小节距为100 /spl mu/m的In合金凸点在低压(≤30 gf/凸点)和低温(≤110/spl℃)下无助焊剂连接到钼导体上。温度低于合金的熔点。平均接触电阻为0.78 /spl ω /。计算最小凸距和合金凸距高度对设计具有小凸距的新型集成电路是有帮助的。它已通过热冲击试验(TST)，高温高湿储存试验证明;并进行了高温贮存试验，接触电阻变化符合规范要求。成功开发了80-/spl μ m间距驱动ic的TFT-LCD原型面板

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of IEEE 43rd Electronic Components and Technology Conference (ECTC '93)

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