RF-TSVs compatible with harsh-environment post-processing for “via-first” 3D integration

2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII) Pub Date : 2013-06-16 DOI:10.1109/TRANSDUCERS.2013.6626895

R. Gueye, S. W. Lee, W. Vitale, S. Truax, T. Akiyama, C. Roman, A. Ionescu, C. Hierold, D. Briand, N. D. de Rooij

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引用次数: 1

Abstract

Platinum TSVs compatible with harsh-environment post-processing were fabricated on an SOI wafer. This study was part of a larger project for the development of a SWCNT resonator, 3D-integrated, in a “via-first” approach, with its driving electronics. After their passivation, they are compatible with the harsh-environment post-processes necessary for the fabrication of the SWCNT resonator: the growth of CNT at a high temperature of 850 °C in an oxidizing environment, and their release in concentrated HF solution. The TSV metallization formed a stable ohmic contact with the silicon device layer on which the CNT resonator will be standing. We present RF (radio frequency) simulations correlated with RF measurements of the Pt-TSVs from 0.3 to 5 GHz. A reflection coefficient of -20 dB and transmission coefficient of -4 dB were measured at 5 GHz.

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rf - tsv兼容恶劣环境的后处理，“先过”3D集成

在SOI晶圆上制备了兼容恶劣环境后处理的铂类tsv。这项研究是一个更大的项目的一部分，用于开发swcnts谐振器，3d集成，采用“通过优先”的方法，其驱动电子设备。钝化后，它们与制造swcnts谐振器所需的恶劣环境后处理相兼容:碳纳米管在850°C的高温氧化环境中生长，并在浓HF溶液中释放。TSV金属化与碳纳米管谐振器所在的硅器件层形成稳定的欧姆接触。我们提出了与pt - tsv在0.3至5 GHz范围内的射频测量相关的RF(射频)模拟。在5 GHz频段测得的反射系数为-20 dB，透射系数为-4 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)

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