Design of an 8.5/25.5 GHz active frequency tripler MMIC

C. J. Verver, M. Stubbs, M. Kiyokawa
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Abstract

The design of an active frequency tripler monolithic microwave integrated circuit (MMIC) for local multipoint communications systems (LMCS) will be described. The x3 multiplier was designed to operate over a 24–27GHz range, or 12% bandwidth, and uses a PHEMT device in common source configuration biased at a class AB quiescent point. Appropriate input and output matching circuits and terminations for undesired harmonics were designed for the multiplier. The circuit was fabricated at a commercial EHF GaAs MMIC foundry with a 0.2 µm low noise AlGaAs/GaAs PHEMT process. The overall chip size is 2.8mm × 1.4mm fabricated on a 100µm thick GaAs substrate. Conversion loss varies between 6dB and 8dB across the 24–27GHz output frequency band. Fundamental, fo, (8–9GHz) suppression is at least 15dB while 2fo (16–18GHz) suppression varies between 10dB and 16dB from the lower to upper edge of the frequency band. Maximum 3rd harmonic output power is about 4dBm with a minimum DC power consumption of 154mW.
8.5/25.5 GHz有源三倍频MMIC的设计
介绍了一种用于本地多点通信系统的有源三倍频单片微波集成电路的设计。x3乘法器设计工作在24-27GHz范围内,即12%的带宽,并在AB类静态点偏置的公共源配置中使用PHEMT器件。为该乘法器设计了适当的输入输出匹配电路和非期望谐波端部。该电路是在商用EHF GaAs MMIC铸造厂采用0.2 μ m低噪声AlGaAs/GaAs PHEMT工艺制造的。整体芯片尺寸为2.8mm × 1.4mm,制作在100 μ m厚的GaAs衬底上。在24-27GHz输出频段,转换损耗在6dB和8dB之间变化。基频(8-9GHz)抑制至少为15dB,而2fo (16-18GHz)抑制从频带的上边缘到下边缘在10dB到16dB之间变化。最大三次谐波输出功率约为4dBm,最小直流功耗为154mW。
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