A simple method for automated extraction of BJT thermal resistance from Early voltage measurements

Abstract

We present a methodology for thermal resistance R/sub TH/ extraction from the Early voltage dependence on collector current. This method does not require pulsed, temperature, or frequency measurements and hence, can be easily automated. Results for a BJT from an SOI/DTI complementary BiCMOS process and for a SiGe HBT from a 50 GHz BiCMOS process are presented and comparison to SPICE simulations is made.