Intermetallic compound growth on Ni, Au/Ni, and Pd/Ni substrates with Sn/Pb, Sn/Ag, and Sn solders [PWBs]

H. D. Blair, T. Pan, J. Nicholson
{"title":"Intermetallic compound growth on Ni, Au/Ni, and Pd/Ni substrates with Sn/Pb, Sn/Ag, and Sn solders [PWBs]","authors":"H. D. Blair, T. Pan, J. Nicholson","doi":"10.1109/ECTC.1998.678704","DOIUrl":null,"url":null,"abstract":"The growth mechanism of the Ni/sub 3/Sn/sub 4/ intermetallic compound (IMC) during aging was studied with three different solders (100Sn, Sn-3.5Ag, and Sn-37Pb) on three different substrates (Ni, Ni/Au, and Ni/Pd), at the temperatures of 75, 100, 125, and 160/spl deg/C from 1 to 36 days. The growth rates of Ni/sub 3/Sn/sub 4/ with Sn on Ni and Ni/Au substrates were similar, growing to about 6 /spl mu/m after 36 days at 160/spl deg/C, but only to about 1-2 /spl mu/m after 36 days at a temperature below 100/spl deg/C. The growth rate of Ni/sub 3/Sn/sub 4/ with Sn-37Pb on Ni/Au substrate was close to that with Sn for the same substrates. However, the Sn-3.5Ag solder showed a slower growth rate of Ni/sub 3/Sn/sub 4/ on both Ni and Ni/Au substrates, resulting in only about half the thicknesses when compared to Sn on the same substrates. In addition to the Ni/sub 3/Sn/sub 4/ compound, a PdSn/sub 4/ compound was observed on the NiPd substrates. The growth rate of Ni/sub 3/Sn/sub 4/ on the Ni/Pd substrate is much slower than that on either the Ni or the Ni/Au substrate, possibly due to the existence of the PdSn/sub 4/ layer between Ni and the solder. At temperatures lower than 100/spl deg/C, there is hardly any Ni/sub 3/Sn/sub 4/ detected for Sn-3.5Ag and Sn-37Pb solders for up to 36 days. The apparent activation energies, Q, are in the range of 3 to 12.8 Kcal/mole, and Q for Ni/sub 3/Sn/sub 4/ with Sn is the highest for the three solders on both the Ni and Ni/Pd substrates, and those for Sn-3.5Ag the lowest. However, Q for Ni/sub 3/Sn/sub 4/ growth with Sn-3.5Ag is the highest on the Ni/Au substrate. A thick Ni/sub 3/Sn/sub 4/ layer may pose potential reliability issues as evidenced by the fractured morphology of the intermetallics due to a 10.7% volume shrinkage during the transformation from solid phase Sn and Ni to the Ni/sub 3/Sn/sub 4/ compound.","PeriodicalId":422475,"journal":{"name":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"50","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Proceedings. 48th Electronic Components and Technology Conference (Cat. No.98CH36206)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.1998.678704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 50

Abstract

The growth mechanism of the Ni/sub 3/Sn/sub 4/ intermetallic compound (IMC) during aging was studied with three different solders (100Sn, Sn-3.5Ag, and Sn-37Pb) on three different substrates (Ni, Ni/Au, and Ni/Pd), at the temperatures of 75, 100, 125, and 160/spl deg/C from 1 to 36 days. The growth rates of Ni/sub 3/Sn/sub 4/ with Sn on Ni and Ni/Au substrates were similar, growing to about 6 /spl mu/m after 36 days at 160/spl deg/C, but only to about 1-2 /spl mu/m after 36 days at a temperature below 100/spl deg/C. The growth rate of Ni/sub 3/Sn/sub 4/ with Sn-37Pb on Ni/Au substrate was close to that with Sn for the same substrates. However, the Sn-3.5Ag solder showed a slower growth rate of Ni/sub 3/Sn/sub 4/ on both Ni and Ni/Au substrates, resulting in only about half the thicknesses when compared to Sn on the same substrates. In addition to the Ni/sub 3/Sn/sub 4/ compound, a PdSn/sub 4/ compound was observed on the NiPd substrates. The growth rate of Ni/sub 3/Sn/sub 4/ on the Ni/Pd substrate is much slower than that on either the Ni or the Ni/Au substrate, possibly due to the existence of the PdSn/sub 4/ layer between Ni and the solder. At temperatures lower than 100/spl deg/C, there is hardly any Ni/sub 3/Sn/sub 4/ detected for Sn-3.5Ag and Sn-37Pb solders for up to 36 days. The apparent activation energies, Q, are in the range of 3 to 12.8 Kcal/mole, and Q for Ni/sub 3/Sn/sub 4/ with Sn is the highest for the three solders on both the Ni and Ni/Pd substrates, and those for Sn-3.5Ag the lowest. However, Q for Ni/sub 3/Sn/sub 4/ growth with Sn-3.5Ag is the highest on the Ni/Au substrate. A thick Ni/sub 3/Sn/sub 4/ layer may pose potential reliability issues as evidenced by the fractured morphology of the intermetallics due to a 10.7% volume shrinkage during the transformation from solid phase Sn and Ni to the Ni/sub 3/Sn/sub 4/ compound.
用Sn/Pb、Sn/Ag和Sn焊料在Ni、Au/Ni和Pd/Ni基片上生长金属间化合物[PWBs]
采用3种不同的钎料(100Sn、Sn-3.5 ag和Sn- 37pb)在3种不同的基体(Ni、Ni/Au和Ni/Pd)上,在75、100、125和160℃的温度下时效1 ~ 36天,研究了Ni/sub 3/Sn/sub 4/金属间化合物(IMC)的生长机理。Ni/sub 3/Sn/sub 4/ with Sn在Ni和Ni/Au衬底上的生长速率相似,在160/spl℃条件下,36天后生长到约6 /spl mu/m,而在低于100/spl℃条件下,36天后仅生长到约1-2 /spl mu/m。Sn- 37pb在Ni/Au基体上的Ni/sub 3/Sn/sub 4/生长速率与Sn在相同基体上的生长速率相近。然而,Sn-3.5 ag钎料在Ni和Ni/Au衬底上的Ni/sub 3/Sn/sub 4/生长速度较慢,厚度仅为相同衬底上Sn的一半左右。除了Ni/sub 3/Sn/sub 4/化合物外,在NiPd衬底上还观察到PdSn/sub 4/化合物。Ni/Pd衬底上Ni/sub 3/Sn/sub 4/的生长速度比Ni或Ni/Au衬底上的生长速度要慢得多,这可能是由于Ni和焊料之间存在PdSn/sub 4/层。在低于100℃的温度下,Sn-3.5 ag和Sn- 37pb焊料在36天内几乎检测不到Ni/sub -3 /Sn/sub - 4。在Ni和Ni/Pd衬底上,三种钎料的表观活化能Q在3 ~ 12.8 Kcal/mol之间,其中Ni/sub 3/Sn/sub 4/ with Sn的表观活化能Q最高,Sn-3.5 ag的表观活化能Q最低。然而,在Ni/Au衬底上,Ni/sub 3/Sn/sub 4/ Sn-3.5 ag生长的Q值最高。在从固相Sn和Ni转变为Ni/sub 3/Sn/sub 4/化合物的过程中,由于体积收缩10.7%,金属间化合物的断裂形貌可能会导致Ni/sub 3/Sn/sub 4/化合物的可靠性问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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