An embedded ReRAM using a small-offset sense amplifier for low-voltage operations

VLSI Design, Automation and Test(VLSI-DAT) Pub Date : 2015-04-27 DOI:10.1109/VLSI-DAT.2015.7114532

Albert Lee, Chien-Chen Lin, T. Yang, Meng-Fan Chang

引用次数: 4

Abstract

This paper presents a Contact Resistive Random Access Memory (CRRAM) macro with an offset-compensated Sense amplifier for low-voltage operation. The proposed circuit aims to solve the variation and speed issues during low-voltage operations. A 256Kb test-chip was fabricated in TSMC 65nm technology. An improvement of 1.78x in read speed and 85.7% in offset was measured compared to conventional sensing methods, and the minimum operating voltage was as low as 0.3V.

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一种嵌入式ReRAM，采用用于低压操作的小偏移感测放大器

本文提出了一种带有偏置补偿放大器的接触电阻随机存取存储器宏，用于低压工作。该电路旨在解决低电压运行时的变化和速度问题。采用台积电65nm工艺制备了256Kb的测试芯片。与传统传感方法相比，读取速度提高了1.78倍，偏移量提高了85.7%，最小工作电压低至0.3V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

VLSI Design, Automation and Test(VLSI-DAT)

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