Influence of thermometric characteristics on accuracy of junction temperature measurements of laboratory made SiC Schottky diodes

Abstract

In this paper results of measurements of thermometric characteristics of silicon carbide Schottky diodes are presented. Such characteristics are used to measure junction temperature of semiconductor devices by means of the indirect electrical method. The examined diodes are described and obtained results of thermal and electrical measurements are presented. The influence of measurement current on the thermometric characteristics is studied. Junctions' temperature estimation errors are in depth studied and described.