Dynamic current-mode multi-valued MOS memory with error correction

Abstract

The design of a dynamic current-mode multivalued MOS memory, with error correction used to increase the noise margins, is presented. It is based on the current-copier and single-slope analog-to-digital conversion techniques. The noise margin of the multivalued stored data is increased by storing and comparing the least significant bits of its binary representation during each refresh cycle. Alternatively, the number of bits of precision can be increased for a given noise margin. Furthermore, this technique provides a design trade-off between noise margin and implementation area.<>