High voltage bipolar transistor with new concepts

Conference Record of the 1992 IEEE Industry Applications Society Annual Meeting Pub Date : 1992-10-04 DOI:10.1109/IAS.1992.244420

I. Takata, T. Hikichi, M. Inoue

引用次数: 4

Abstract

The 200 A class bipolar transistors developed for 440 V AC line use have two-stage Darlington construction to accomplish the low power loss, V/sub CE/(sat)=1.5 V, t/sub f/>

查看原文本刊更多论文

具有新概念的高压双极晶体管

为440 V交流线路开发的200a级双极晶体管采用两级达灵顿结构，以实现低功耗，V/sub CE/(sat)=1.5 V, t/sub f/>

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Conference Record of the 1992 IEEE Industry Applications Society Annual Meeting

自引率

0.00%

发文量