New developments in silicon technology

C. Beenakker
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引用次数: 1

Abstract

This paper addresses new developments related to silicon technology and silicon devices in the areas of high speed integrated circuits, intelligent sensors, solar cells and large area electronics. These areas benefit strongly from the rapid advances made in ULSI technology without directly needing lateral dimensions in the 100 nm region and the extremely high investments related to these. As such, they form highly relevant research areas, which can successfully be executed in an academic environment. As examples, silicon-on-anything technology, high speed biochemical analysis systems, high speed deposition systems for solar cells and a new approach for making location controlled high performance TFTs on glass substrates are discussed briefly.
硅技术的新发展
本文介绍了硅技术和硅器件在高速集成电路、智能传感器、太阳能电池和大面积电子等领域的最新进展。这些领域从ULSI技术的快速发展中受益匪浅,而无需直接需要100纳米区域的横向尺寸和与之相关的极高投资。因此,它们形成了高度相关的研究领域,可以在学术环境中成功地执行。作为例子,本文简要地讨论了任意硅技术、高速生化分析系统、太阳能电池的高速沉积系统以及在玻璃基板上制造位置控制的高性能tft的新方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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