D. Knoll, B. Heinemann, R. Barth, K. Blum, J. Borngraber, J. Drews, K. Ehwald, G. Fischer, A. Fox, T. Grabolla, U. Haak, W. Hoppner, F. Korndorfer, B. Kuck, S. Marschmeyer, H. Richter, H. Rucker, P. Schley, D. Schmidt, R. Scholz, B. Senapati, B. Tillack, W. Winkler, D. Wolansky, C. Wolf, H. Wulf, Y. Yamamoto, P. Zaumseil
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引用次数: 18
Abstract
We demonstrate a BiCMOS process which uses only 22 mask steps to fabricate four types of SiGe:C HBTs, in combination with a triple-well, 2.5V CMOS core and a full menu of passive elements. Key process feature is a 2-mask HBT module. We show that transistors with peak fT values ranging from 3OGHz (@ 7V BV,) up to 130GHz (@ 2.1V BVczo) can he fabricated with this low-cost module. Among the passives are varactors, polysilicon resistors, and a 2fF/pmz MIMsapacitor. Five layers of AI are available, including 2pm and 3pm thick upper layers. SOC ability of the process is demonstrated by a 1MSRAM yield of typically 70%.
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