On-Wafer Transistor Characterization to 750 GHz – the Approach, Results, and Pitfalls

Abstract

We review approaches developed at the National Institute of Standards and Technology for on-wafer transistor characterization and model parameter extraction at submillimeter wavelengths and compare them to more common approaches developed for use at lower frequencies. We discuss important improvements in accuracy, approaches to estimating the uncertainty of the procedure, and recent research on further improving these methods.