Statistical Distribution of Charge Carriers in β-HgS Quantized Layer in Lateral Electrostatic Field

Abstract

- The specificity of the statistical distribution of electrons, heavy and light holes in a plane-parallel metacinnabar film under conditions of a quantum size effect and in the presence of a transversal electrostatic field is considered in the effective mass approximation. Consideration was carried out for the case when only the first film subband of size quantization is filled.Explicit analytical expressions are obtained for the chemical potential and concentration, internal energy, and heat capacity of the electron-hole subsystem in the quantized filmin the absence and presence of an external field. The analysis of the dependence of the indicated statistical characteristics of the material on the quantizing thickness of the layer, the strength of the external fieldand temperature of the system is carried out. The corresponding numerical estimates are also given.