Energy-delay tradeoffs of low-voltage dual mode logic in 28nm FD-SOI

R. Taco, I. Levi, M. Lanuzza, A. Fish
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引用次数: 1

Abstract

In this paper, the Dual Mode Logic (DML) technique is evaluated on a low-voltage 16-bit Carry Skip Adder in 28 nm UTBB FD-SOI technology. By combining the operating characteristics of the DML and the unique features of the technology, energy/speed efficient low-voltage adder designs can be defined. More precisely, it is demonstrated that, the capability of the DML design to switch on-the-fly between static and dynamic modes of operation leads to an improvement of more than 20% in terms of energy-delay product (EDP) in comparison to the conventional CMOS design. Moreover, the high efficiency of back plane biasing in the adopted technology allows very fine tuning of energy-delay performances of a DML design, thus emphasizing its intrinsic versatility.
28nm FD-SOI中低压双模逻辑的能量延迟权衡
本文在28nm UTBB FD-SOI技术的低压16位进位跳频加法器上对双模逻辑(DML)技术进行了评估。通过结合DML的工作特性和该技术的独特功能,可以定义节能/速度高效的低压加法器设计。更准确地说,它证明了DML设计在静态和动态工作模式之间切换的能力,与传统的CMOS设计相比,在能量延迟积(EDP)方面提高了20%以上。此外,所采用的技术中背板偏置的高效率允许非常精细地调整DML设计的能量延迟性能,从而强调其固有的多功能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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