Low-noise performance near BV/sub CEO/ in a 200 GHz SiGe technology at different collector design points

Abstract

We explore the low-noise behavior of both high-f/sub T/ and enhanced-breakdown SiGe HBTs, showing key differences as a function of V/sub CB/. Both devices achieve values for F/sub min/ below 0.4, 1.2 and 1.4 dB at 10, 15 and 20 GHz, respectively, with corresponding G/sub A/ values better than 18.5, 14.5 and 13.2 dB. In addition, the enhanced-breakdown device demonstrates the ability to operate at 1 V higher V/sub CB/ compared with the high-f/sub T/ device prior to the onset of avalanche-induced F/sub min/ degradation. Combined with a lower C/sub CB/, this improved V/sub CB/ range allows the device to achieve higher gain for the same or lower noise.