{"title":"Integrated development and manufacturing methodology for advanced power MOSFETs","authors":"M. Kasem","doi":"10.1109/IEMT.1997.626867","DOIUrl":null,"url":null,"abstract":"This paper briefly illustrates the principles of Integrated Product Development (IPD) as an effective framework for new product development. However, the success of management implementing IPD is dependent on a number of fundamental changes in the current development process. These include emphasis on teamwork and the expansion of the role of manufacturing, as well as the application of Design for Manufacturability (DFM) as a business driver. The paper also describes the superior characteristics of 8-lead power TSSOP packages, which were developed for ultra high density Trench MOSFETs using IPD principles.","PeriodicalId":227971,"journal":{"name":"Twenty First IEEE/CPMT International Electronics Manufacturing Technology Symposium Proceedings 1997 IEMT Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Twenty First IEEE/CPMT International Electronics Manufacturing Technology Symposium Proceedings 1997 IEMT Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.1997.626867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper briefly illustrates the principles of Integrated Product Development (IPD) as an effective framework for new product development. However, the success of management implementing IPD is dependent on a number of fundamental changes in the current development process. These include emphasis on teamwork and the expansion of the role of manufacturing, as well as the application of Design for Manufacturability (DFM) as a business driver. The paper also describes the superior characteristics of 8-lead power TSSOP packages, which were developed for ultra high density Trench MOSFETs using IPD principles.