GaN virtual prototyping: From traps modeling to system-level cascode optimization

G. Curatola, Andreas Kassmanhuber, S. Yuferev, J. Franke, G. Pozzovivo, S. Lavanga, G. Prechtl, T. Detzel, O. Haeberlen
{"title":"GaN virtual prototyping: From traps modeling to system-level cascode optimization","authors":"G. Curatola, Andreas Kassmanhuber, S. Yuferev, J. Franke, G. Pozzovivo, S. Lavanga, G. Prechtl, T. Detzel, O. Haeberlen","doi":"10.1109/ESSDERC.2014.6948829","DOIUrl":null,"url":null,"abstract":"The present paper focuses on the system-level optimization of GaN technology for high voltage applications. We will show that a key requirement for the future success of the GaN technology is the full system-optimization achieved by a simultaneous optimization of technology, packaging and applications. We will also show that Virtual Prototyping (VP) becomes, in GaN technology, a fundamental tool that allows not only to have a fundamental understanding of the device properties but more importantly it allows to strongly link device optimization, technology and system-level performance. In the present paper we will describe our view on the system-level optimization of high voltage GaN technology and present detailed simulations and comparison with experiments for both normally on isolated GaN transistors and cascoded GaN devices in real switching applications.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 44th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2014.6948829","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

The present paper focuses on the system-level optimization of GaN technology for high voltage applications. We will show that a key requirement for the future success of the GaN technology is the full system-optimization achieved by a simultaneous optimization of technology, packaging and applications. We will also show that Virtual Prototyping (VP) becomes, in GaN technology, a fundamental tool that allows not only to have a fundamental understanding of the device properties but more importantly it allows to strongly link device optimization, technology and system-level performance. In the present paper we will describe our view on the system-level optimization of high voltage GaN technology and present detailed simulations and comparison with experiments for both normally on isolated GaN transistors and cascoded GaN devices in real switching applications.
GaN虚拟原型:从陷阱建模到系统级级级代码优化
本文着重于GaN技术在高压应用中的系统级优化。我们将展示GaN技术未来成功的关键要求是通过同时优化技术,封装和应用来实现完整的系统优化。我们还将展示虚拟样机(VP)在GaN技术中成为一种基本工具,不仅可以对器件属性有基本的了解,而且更重要的是它可以将器件优化,技术和系统级性能紧密联系起来。在本文中,我们将描述我们对高压GaN技术的系统级优化的看法,并在实际开关应用中对正常隔离GaN晶体管和级联GaN器件进行详细的模拟和实验比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信