Density Functional Theory (DFT) Analysis on the Structural, Electronic, and Optical Properties of Monoclinic HfO2

J. Kar, S. Chaudhury, Neerja Dharmale
{"title":"Density Functional Theory (DFT) Analysis on the Structural, Electronic, and Optical Properties of Monoclinic HfO2","authors":"J. Kar, S. Chaudhury, Neerja Dharmale","doi":"10.1109/VLSIDCS53788.2022.9811464","DOIUrl":null,"url":null,"abstract":"Structural and optoelectronic properties of monoclinic hafnium dioxide (m-HfO2) are explored and studied using density functional theory (DFT). For the computation, OLCAO-MGGA-TB09+c exchange-correlation has been used. The electronic properties such as band diagram and both densities of state (DOS) are analyzed in depth. The bandgap value obtained using MGGA-TB09+c exchange-correlation is 5.73 eV. In addition, we analyzed the different optical properties such as dielectric function, refractive index, extinction coefficient, reflectivity, optical conductivity, energy loss function, and absorption coefficient of the m-HfO2 compound and observed that the results so obtained greatly matches with previously reported computational and experimental data. It is found that the MGGA-TB09 technique gives good results on all properties compared to existing computational work.","PeriodicalId":307414,"journal":{"name":"2022 IEEE VLSI Device Circuit and System (VLSI DCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE VLSI Device Circuit and System (VLSI DCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIDCS53788.2022.9811464","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Structural and optoelectronic properties of monoclinic hafnium dioxide (m-HfO2) are explored and studied using density functional theory (DFT). For the computation, OLCAO-MGGA-TB09+c exchange-correlation has been used. The electronic properties such as band diagram and both densities of state (DOS) are analyzed in depth. The bandgap value obtained using MGGA-TB09+c exchange-correlation is 5.73 eV. In addition, we analyzed the different optical properties such as dielectric function, refractive index, extinction coefficient, reflectivity, optical conductivity, energy loss function, and absorption coefficient of the m-HfO2 compound and observed that the results so obtained greatly matches with previously reported computational and experimental data. It is found that the MGGA-TB09 technique gives good results on all properties compared to existing computational work.
密度泛函理论(DFT)分析单斜斜HfO2的结构、电子和光学性质
利用密度泛函理论(DFT)研究了单斜二氧化铪(m-HfO2)的结构和光电子特性。计算采用OLCAO-MGGA-TB09+c交换相关。深入分析了带图和双态密度(DOS)等电子特性。利用MGGA-TB09+c交换相关得到的带隙值为5.73 eV。此外,我们分析了m-HfO2化合物的介电函数、折射率、消光系数、反射率、光导率、能量损失函数和吸收系数等不同光学性质,并观察到所得结果与前人报道的计算和实验数据有很大的匹配。与现有的计算工作相比,MGGA-TB09技术在所有性能上都取得了较好的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信