Characterization of single and composites thin films memristive device

S. M. M. Kasim, N. Shaari, R. A. Bakar, Z. Aznilinda, Z. Mohamad, S. H. Herman
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Abstract

In this paper, three different sets of samples were prepared to compare the memristive behavior of single layer metal oxide which is zinc oxide (ZnO) as well as two composite ZnO and TiO2 double layer thin film samples. Spin coating method was selected to deposit ZnO and TiO2 solutions on indium tin oxide (ITO)/Glass substrate. Platinum (Pt) was used as the top metal electrode which had been deposited on metal oxide layer using sputtering method. Memristive behavior determined by the current-voltage (I-V) characterization had been measured using two-point probe I-V measurement. From the I-V characteristics, it can be seen that pinched hysteresis loop were seen for all samples yet hysteresis loop with composite layer gave a wider loop compared to the single one. Thus, it can be observed that composite layer affects the behavior of memristive device.
单薄膜和复合薄膜忆阻器件的表征
本文制备了三组不同的样品,比较了单层金属氧化物氧化锌(ZnO)和两种复合ZnO和TiO2双层薄膜样品的忆阻行为。选择自旋镀膜法在氧化铟锡(ITO)/玻璃基板上沉积ZnO和TiO2溶液。采用溅射法将铂(Pt)沉积在金属氧化物层上作为顶部金属电极。用两点探针测量了电流-电压(I-V)表征确定的记忆行为。从I-V特性可以看出,所有样品的迟滞回线都被压缩,但复合层的迟滞回线比单一的迟滞回线更宽。由此可见,复合层对忆阻器件的性能有一定的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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