Deposition rate dependence of the 5 nm-thick ferroelectric nondoped HfO2 on MFSFET characteristics

Abstract

In this research, deposition rate dependence of 5 nm-thick ferroelectric nondoped HfO2 (FeND-HfO2) on the device characteristics was investigated. The equivalent oxide thickness (EOT) and leakage current were decreased by increasing deposition rate of HfO2 from 5.0 nm/min to 6.0 nm/min. The subthreshold swing (SS) of 107 mV/dec. and saturation mobility (μsat) of 150 cm2/(Vs) were obtained with deposition rate of 6.0 nm/min. Furthermore, the threshold voltage (VTH) was controllable as the number of identical erase pulse of 4 V/1 μs was increased, which suggested the VTH control of approximately 10 mV.