Noise spectroscopy of semiconductor materials and devices

Abstract

The noise spectroscopy in time and frequency domain is used to give information on single carrier trapping and charge carrier transport in MOSFETs, quantum dots, conducting film resistors, capacitors and single crystals. Defects in the vicinity of the p-n junction and MOS channel create 1/f noise, burst noise or RTS noise. The sources of fluctuation are quantum transitions of carriers between localised states and energy bands, carrier number and mobility. Noise reliability indicators are used to assess the device quality and reliability.