N. Sénégond, D. Certon, Jean-Edouard Bernard, F. Teston
{"title":"Characterization of cMUT by Dynamic Holography Microscopy","authors":"N. Sénégond, D. Certon, Jean-Edouard Bernard, F. Teston","doi":"10.1109/ULTSYM.2009.5441729","DOIUrl":null,"url":null,"abstract":"The comparison of numerical simulations to real cMUT behavior is essential to assess and optimize the process. For a complete characterization multiple devices (FIB, SEM, impedancemetry, laser interferometry, ...) are needed. In this context, we propose to use a full-field measurement device, a Digital Holography Microscopy (DHM Lynceetec®), which acquires static and dynamic in-plane and out-of-plane information of membranes population in a single acquisition and then provides most of required parameters. This paper presents the principle of this device, its performances comparing to other ones and its limits.","PeriodicalId":368182,"journal":{"name":"2009 IEEE International Ultrasonics Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Ultrasonics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULTSYM.2009.5441729","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
The comparison of numerical simulations to real cMUT behavior is essential to assess and optimize the process. For a complete characterization multiple devices (FIB, SEM, impedancemetry, laser interferometry, ...) are needed. In this context, we propose to use a full-field measurement device, a Digital Holography Microscopy (DHM Lynceetec®), which acquires static and dynamic in-plane and out-of-plane information of membranes population in a single acquisition and then provides most of required parameters. This paper presents the principle of this device, its performances comparing to other ones and its limits.