A Microwave Frequency Halver with Conversion Gain

Abstract

A novel frequency halver circuit is presented, based on the concept of parametric division using a Schottky diode. This technique utilizes the gate to source Schottky diodes of two FETs in a half frequency, resonant loop configuration. Measurements of such a frequency divider, for an input signal in X-band, show conversion gain with good suppression of the fundamental frequency. Unlike its predecessors, it is characterized by a low turn-on threshold.