Impact of halo implantation on short channel effect in MOSFETs

Abstract

The normal short-channel effect of MOSFET's with halo implantation has been investigated. An Athena PLS diffusion model has been used to develop plot for various doses of Arsenic and Boron in PMOS structure using SILVACO. Various doses of both halo, arsenic and boron are changed to observe depletion depth and their resultant increase in threshold voltage in each cases.