Millimeter Wave Detection on Gated Selectivelly Doped Semiconductor Structure

Abstract

Microwave detectors on the base of asymmetrically shaped n-n junction of various semiconductor structures revealed possibility to detect electromagnetic radiation in very broad frequency range, i.e. from microwaves up to terahertz region. However, such detectors suffer from their low voltage sensitivity. Introduction of gate over asymmetrically shaped two dimensional electron gas (2DEG) channel in selectively doped structure essentially enhanced the sensitivity of diode, however, only in the X frequency range. Attempts to use the gated diodes at higher frequencies are demonstrated in this paper.