Ring Oscillator Performance and Parasitic Extraction Simulation in Finfet Technology

Abstract

Correlation of a full parasitic extracted simulation using StarRC and SPICE to silicon is demonstrated for fully depleted (FD) FinFET silicon-on-insulator ring oscillators. The results indicate similar accuracy can be expected as obtained from bulk simulations. This is important in integrated circuit development, as the accurate simulation of circuit performance is imperative to IC development