Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) Substrates

Abstract

GaN HEMTs are promising for the RF applications due to the high electron mobility. Recently, GaN-on-Si technologies attracts lots of attentions. Furthermore, the SOI substrate is also promising for the RF applications due to the reduction of the substrate loss. However, the typical GaN-on-SOI (silicon-on-insulator) requires the epitaxy on top of the SOI substrates.