Polarization inverted (0001) / (000-1) ScAIN film resonators operating in second overtone mode

Masashi Suzuki, T. Yanagitani, H. Odagawa
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引用次数: 2

Abstract

Polarization-inverted multilayered structure can excite high overtone mode resonance. Resonant frequency of high order mode resonator is higher than that of 1st mode resonator even though entire film thickness is same. The film thickness of high order mode resonator is thicker in same operating frequency. Therefore, high order mode resonator is expected to have high power handling capability. Polarization are controlled by bottom surface properties in epitaxial films, but polarization inverted multilayer structure can not be fabricated. We obtained polarization inversion in ScAlN film by Al target sputtering with small amount of Al2O3 ingot. Thickness extensional mode electromechanical coupling coefficient kt of the ScAlN film was estimated to be 0.21. Two layered polarization inverted ScAlN film resonator was prepared in this deposition process. Suppression of 1st mode resonance and excitation of 2nd overtone mode resonance were observed.
在第二泛音模式下工作的极化倒置(0001)/(000-1)扫描薄膜谐振器
极化反转多层结构可激发高泛音模共振。在全膜厚度相同的情况下,高阶谐振腔的谐振频率高于一阶谐振腔。在相同工作频率下,高阶谐振腔的膜厚较厚。因此,高阶模谐振器被期望具有高功率处理能力。在外延薄膜中,极化是由底表面特性控制的,但不能制造出极化倒置的多层结构。用少量Al2O3铸锭溅射Al靶,获得了ScAlN薄膜的极化反转。估计ScAlN薄膜的厚度外延型机电耦合系数kt为0.21。在此沉积过程中制备了两层极化倒ScAlN薄膜谐振器。观察到一阶模共振的抑制和二阶泛音模共振的激发。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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