Innovative Yield Modeling using Statistics

K. Anderson
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引用次数: 7

Abstract

Yield loss in semiconductor manufacturing has been a concern since the invention of the integrated circuit by Kilby, et. al (1958). There has often been contentious disagreement in the literature on the subject of yield modeling. From a business perspective, the utility of accurately describing past yields and predicting the future yield of a product is obvious. It is arguably the single most influential metric to gauge the financial success of a product, process, and manufacturer. Unfortunately, simple models fail to accurately describe the actual mechanisms of yield loss, and models with good fidelity can be extremely complex, thus difficult to implement and sustain. Most parsimonious die yield models use the Poisson distribution as the base. It has been and is well known that certain Poisson assumptions, e.g. spatial independence of faults, are frequently and violently violated. These violations often cause systematic bias in yield estimations using these models, to the point of making the model predictions grossly inaccurate, usually in the unoptimistic direction. Yield modeling "state-of-the-art" now uses other distributions almost exclusively, of which the negative binomial is the most popular. The only additional term that needs definition from the previous Poisson distribution is the clustering parameter, alpha. This clustering parameter ranges from 1, which indicates a high degree of fault clustering, to infin, which indicates no clustering at all...random faults. The International Technical Roadmap for Semiconductors (2005) recommends this yield model with a clustering parameter of 2, but this value is a sweeping generalization that simplifies the model, but may or may not represent the yield of a certain process or product with acceptable fidelity. This presentation discusses studies using the negative binomial yield model with innovative spatial statistics using Markov random fields and nonlinear regression adaptations to directly estimate both D0 and a simultaneously. It discusses the coupling of statistical, mathematical, and fuzzy logic approaches to scaling those estimates to other products and technologies. These procedures can be employed to accomplish an accurate comparison of product yields, make design recommendations, and to forecast yields for products even when they have yet to be manufactured. Model fidelities and predictions have been proven very accurate. The presentation also presents an innovative approach to the prediction of yield over time that utilizes a modified logistic model, to estimate yield learning rates and quantify the speed and acceleration of yield improvements
利用统计学的创新产量模型
自Kilby等人(1958年)发明集成电路以来,半导体制造中的产率损失一直是一个令人担忧的问题。关于产量模型的问题,文献中经常存在有争议的分歧。从商业的角度来看,准确地描述过去的收益和预测产品的未来收益的效用是显而易见的。可以说,它是衡量产品、流程和制造商财务成功的最具影响力的单一指标。不幸的是,简单的模型不能准确地描述产量损失的实际机制,而保真度好的模型可能非常复杂,因此难以实施和维持。大多数简化的模具产量模型使用泊松分布作为基础。众所周知,某些泊松假设,如断层的空间独立性,经常被严重违反。这些违规行为经常导致使用这些模型进行产量估计时出现系统性偏差,以至于使模型预测非常不准确,通常是在不乐观的方向上。“最先进的”产量模型现在几乎完全使用其他分布,其中负二项分布最受欢迎。需要从前面的泊松分布中定义的唯一附加项是聚类参数alpha。该聚类参数的取值范围从1到infin,表示故障聚类程度高,表示完全不聚类。随机故障。国际半导体技术路线图(2005)推荐使用聚类参数为2的良率模型,但这个值是一个笼统的概括,简化了模型,但可能或可能不代表某一过程或产品的良率,具有可接受的保真度。本报告讨论了使用负二项产量模型的研究,该模型具有创新的空间统计,使用马尔可夫随机场和非线性回归适应来同时直接估计D0和a。它讨论了统计、数学和模糊逻辑方法的耦合,以将这些估计扩展到其他产品和技术。这些程序可以用来完成产品产量的准确比较,提出设计建议,并预测产品的产量,即使它们还没有被制造出来。模型的保真度和预测已被证明是非常准确的。该报告还提出了一种创新的方法来预测产量随时间的变化,该方法利用改进的逻辑模型来估计产量学习率并量化产量改进的速度和加速度
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