Optimizing performance of dual metal gate modified source FDSOI using symmetric and asymmetric oxide spacers

Abstract

This Paper is focused on improving the ON current and reducing the OFF current with the use of different types of the high-k spacer. Some spacers provide better ON current and some provide lower OFF current (leakage current). Lowering of leakage current can also be controlled by use of high-K BOX (buried oxide layer). In this paper, we used TiO2, HfO2, SÌ3N4 and SiO2 at 50 nm gate length Modified Source DMG FDSOI structure. All simulation part has been done on Silvaco tool.