ESD gated diode SPICE compact model

Z. Gan, An Zhang, W. Wong, Lifei Zhang, Ye Haohua, C. Tseng
{"title":"ESD gated diode SPICE compact model","authors":"Z. Gan, An Zhang, W. Wong, Lifei Zhang, Ye Haohua, C. Tseng","doi":"10.1109/CSTIC.2015.7153319","DOIUrl":null,"url":null,"abstract":"A physics-based new gated diode SPICE compact model is provided considering the following two effects: (1) the leakage current under reverse bias of gated diode caused by the gate/diffusion overlap tunneling current; (2) the substrate conductivity modulation associated with high injection of carriers due to mobility saturation during high current transmission line pulse (TLP). The new SPICE model matches the silicon data under both ESD TLP and normal DC forward/reverse bias very well. The model is scalable in terms of finger width and number.","PeriodicalId":130108,"journal":{"name":"2015 China Semiconductor Technology International Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 China Semiconductor Technology International Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2015.7153319","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

A physics-based new gated diode SPICE compact model is provided considering the following two effects: (1) the leakage current under reverse bias of gated diode caused by the gate/diffusion overlap tunneling current; (2) the substrate conductivity modulation associated with high injection of carriers due to mobility saturation during high current transmission line pulse (TLP). The new SPICE model matches the silicon data under both ESD TLP and normal DC forward/reverse bias very well. The model is scalable in terms of finger width and number.
ESD门控二极管SPICE紧凑型
本文提出了一种基于物理的新型门控二极管SPICE紧凑模型,该模型考虑了以下两种影响:(1)门控二极管在反向偏置下由于门/扩散重叠隧穿电流引起的漏电流;(2)在高电流传输线脉冲(TLP)期间,由于迁移率饱和导致的载流子高注入导致的衬底电导率调制。新的SPICE模型可以很好地匹配ESD TLP和普通直流正/反向偏置下的硅数据。该模型在手指宽度和数量方面是可扩展的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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