Design of a High Voltage Level Shift with High dV/dt Immunity and High Speed

Ze-kun Zhou, Zhijian Zhang, Lichen Peng
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引用次数: 0

Abstract

A sub-nanosecond-delay level shifter with an above 75V/ns power supply slew tolerance is proposed in this paper. In this design, two speed-up branches are adapted to realize a sub-ns delay and high CMTI immunity circuit is proposed to ensure high dv/dt tolerance. Besides, with the control of CMTI enhanced logic, speed-up branches are reused to enhance the dv/dt immunity for a better CMTI performance. And this structure can be expended to higher voltage range of application like 80V level shifter to tolerant the large range power supply slew. The proposed level shifter simulated with 0.18µm BCD process shows delay of 700ps and 30V/ns dv/dt immunity in the 35V high voltage application and can tolerant an 75V/ns dv/dt in 80V application.
高抗dV/dt抗扰度高速高压电平转换器的设计
本文提出了一种亚纳秒级延迟电平移位器,其电源摆幅容限在75V/ns以上。在本设计中,采用两个加速支路实现亚ns级延迟,并采用高CMTI抗扰电路保证高dv/dt容差。此外,在CMTI增强逻辑的控制下,加速支路复用,增强dv/dt抗扰度,从而获得更好的CMTI性能。该结构可扩展到更高电压范围的应用中,如80V电平移位器,以承受大范围的电源转换。采用0.18µm BCD工艺模拟的电平转换器在35V高压环境下具有700ps的延迟和30V/ns dv/dt抗扰度,在80V高压环境下具有75V/ns dv/dt抗扰度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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