Xiaoyue Zhao, M. Shao, Houfang Liu, R. Zhao, Xichen Sun, Xiao Liu, Xiaoming Wu, Yi Yang, T. Ren
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引用次数: 0
Abstract
Gd top electrode was applied in the Hf0.5Zr0.5O2 (HZO)-based capacitors via re-capping technique and its ferroelectric characteristics were investigated. A recorded-highest positive coercive field value of ~3.02 MV/cm was demonstrated with a Pr value near 11.1 μC/cm2. The asymmetric switching dynamics of the Pt/Gd/HZO/TiN capacitor were studied to confirm the origin of the large Ec. This work will contribute to the future applications of Gd electrodes in ferroelectric memory transistors.
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