RF receiver chip set employing 0.13 μm CMOS technology for application to K-band commercial automotive radar system

Young-bea Park, Se-Ho Kim, Y. Yun, Kyu-Ho Park, K. Ahn, Kim Ki-jin, Kim Jin-Sup, Cho, Se-Hwan
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引用次数: 1

Abstract

A 24 GHz low-noise amplifier (LNA) and mixer for automotive radar applications was designed using a standard 0.13-mum CMOS technology. For mixer, single balanced resistive mixer was employed to suppress LO leakage signal on RF port. At 24 GHz, the mixer showed a conversion loss of -5.5 dB, an LO leakage suppression of -56.2 dBc on RF port, and 3rd input intercept point of 12 dBm. To achieve sufficient gain, this LNA is composed of three cascaded common-source stages. Source degeneration inductor was used to achieve low noise, and gate resistive matching was used to increase stability. The LNA showed a gain of 15.3 dB and a noise figure of 4.49 dB at 24 GHz, and it showed unconditional stability.
采用0.13 μm CMOS技术的射频接收机芯片组,用于k波段商用汽车雷达系统
采用标准的0.13 μ m CMOS技术,设计了用于汽车雷达应用的24 GHz低噪声放大器(LNA)和混频器。混频器采用单平衡阻式混频器抑制射频口漏LO信号。在24 GHz时,混频器的转换损耗为-5.5 dB,射频端口的LO泄漏抑制为-56.2 dBc,第三输入截距为12 dBm。为了获得足够的增益,该LNA由三个级联的共源级组成。采用源退化电感实现低噪声,采用门阻匹配提高稳定性。LNA在24 GHz时的增益为15.3 dB,噪声系数为4.49 dB,具有无条件稳定性。
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