Donor doping calibration in 4H-SiC using photoluminescence spectroscopy

Abstract

The relative intensity of the intrinsic and impurity-related luminescence lines reflects the impurity concentration. A calibration procedure is presented for the nitrogen donor impurity in 4H-SiC. The calibration is valid for a large range of n-type doping from 10/sup 14/ cm/sup -3/ to 3.10/sup 16/ cm/sup -3/. Above this level the free-exciton related emission is not observable and below careful attention regarding the compensation of the material should be noted.