S. Tadjpour, P. Rossi, L. Romanò, R. Chokkalingam, H. Firouzkouhi, Feng Shi, M. Leroux, D. Gerna, A. Venca, J. Vasa, B. Ramachandran, B. Brunn, A. Pirola, D. Ottini, A. Milani, E. Sacchi, M. Behera, X. Chen, U. Decanis, Marika Tedeschi, S. DalToso, W. Eyssa, C. Cakir, C. Prakash, Yong He, N. Damavandi, R. Srinivasan, D. Shum, X. Fan, C. Yu, Engin Pehlivanoglu, H. Zarei, A. Loke, G. Uehara, R. Castello, Y. Song
{"title":"A multi-band Rel9 WCDMA/HSDPA/TDD LTE and FDD LTE transceiver with envelope tracking","authors":"S. Tadjpour, P. Rossi, L. Romanò, R. Chokkalingam, H. Firouzkouhi, Feng Shi, M. Leroux, D. Gerna, A. Venca, J. Vasa, B. Ramachandran, B. Brunn, A. Pirola, D. Ottini, A. Milani, E. Sacchi, M. Behera, X. Chen, U. Decanis, Marika Tedeschi, S. DalToso, W. Eyssa, C. Cakir, C. Prakash, Yong He, N. Damavandi, R. Srinivasan, D. Shum, X. Fan, C. Yu, Engin Pehlivanoglu, H. Zarei, A. Loke, G. Uehara, R. Castello, Y. Song","doi":"10.1109/ESSCIRC.2014.6942102","DOIUrl":null,"url":null,"abstract":"This paper presents a transceiver capable of supporting 2G/3G/4G LTE FDD bands 1-20 and TDD bands 34-41. The chip includes main and diversity receivers, direct conversion transmitter, internal closed loop power control, antenna tuning and Envelope Tracking DAC. It supports Rel 9 dual band dual carrier HSDPA using a second Receive PLL. The Receiver has better than 2.5dB Noise Figure and better than 50dBm IIP2 for all modes. The transmitter uses class AB power mixer for better power consumption. The overall chip is fabricated in TSMC 55nm process and occupies 19mm2 of area and consumes 92mA from the battery at 0dBm transmit power.","PeriodicalId":202377,"journal":{"name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2014.6942102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper presents a transceiver capable of supporting 2G/3G/4G LTE FDD bands 1-20 and TDD bands 34-41. The chip includes main and diversity receivers, direct conversion transmitter, internal closed loop power control, antenna tuning and Envelope Tracking DAC. It supports Rel 9 dual band dual carrier HSDPA using a second Receive PLL. The Receiver has better than 2.5dB Noise Figure and better than 50dBm IIP2 for all modes. The transmitter uses class AB power mixer for better power consumption. The overall chip is fabricated in TSMC 55nm process and occupies 19mm2 of area and consumes 92mA from the battery at 0dBm transmit power.
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