IC models accounting for effects of EM noise

Abstract

This paper addresses the generation of enhanced models of digital ICs. The proposed models accurately represent the effects of the fluctuations of the device port signals induced by EM disturbances coupling to the system interconnect. The models can be easily estimated from the device port transient responses and can be effectively implemented in any commercial tool as SPICE subcircuits. Model accuracy is assessed by comparing measurements carried out on a test board and simulations. The effects of both continuous wave sinusoidal and pulsed disturbances are discussed.