Length and fin number dependence of ionizing radiation-induced degradation in bulk FinFETs

Abstract

Ultra-small bulk FinFETs (dual-well and triple-well) from a commercial process have been exposed to total ionizing dose. The devices have varying numbers of fins and channel length. The devices show a significant increase in off-state leakage current, threshold voltage shift, transconductance and subthreshold slope degradation after irradiation to 300 krad(SiO2). The results also show a strong dependence of fin-to-fin variation and trapped charge in the STI on the radiation response of the devices.