Transport properties of the two-dimensional electron gas in Al/sub x/Ga/sub 1-x/N/GaN heterostructures

B. Shen, N. Tang, Jie Lu, Z. Zheng, Dunjun Chen, Y. Gui, Qiu Zhijun, C. Jiang, S. Gu, J. Chu, Rong Zhang, Youdou Zheng
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Abstract

Magnetotransport properties of modulation-doped Al/sub x/Ga/sub 1-x/N/GaN heterostructures were studied at low temperatures and high magnetic fields. The strong Shubnikov-de Hass oscillations with the double periodicity is clearly observed, indicating the two-dimensional electron gas (2DEG) occupation of the double subbands in the triangular quantum well at the heterointerfaces. It is determined that the 2DEG occupation of the double subbands occurs when the 2DEG sheet concentration reaches 9.0 /spl times/ 10/sup 12/cm/sup -2/, and the energy separation between the first and the second subbands is 75 meV. The quantum scattering time related to the first subband is determined to be 8.4 /spl times/ 10/sup -14/ s. The mobilities of the 2DEG in the first and the second subbands, magnetointersubband scattering oscillations of the 2DEG and the spin splitting of the 2DEG have also been studied.
Al/sub x/Ga/sub 1-x/N/GaN异质结构中二维电子气体的输运性质
研究了调制掺杂Al/sub x/Ga/sub 1-x/N/GaN异质结构在低温和强磁场下的磁输运特性。在异质界面处观察到双周期的强舒布尼科夫-德哈斯振荡,表明二维电子气体(2DEG)占据了三角形量子阱的双子带。结果表明,当2DEG片材浓度达到9.0 /spl倍/ 10/sup 12/cm/sup -2/时,双亚带发生2DEG占据,第一亚带和第二亚带之间的能量间隔为75 meV。确定了与第一子带相关的量子散射时间为8.4 /spl倍/ 10/sup -14/ s,并研究了2DEG在第一和第二子带的迁移率、2DEG的磁子带间散射振荡和2DEG的自旋分裂。
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