Electrical characterisation of n and p-channel SiGe MOSFETs with gate oxides formed by plasma oxidation

Abstract

Surface channel strained SiGe MOSFETs have been fabricated using a low thermal budget process including gate oxidation by plasma anodisation at circa 100C. The fabrication process is detailed together with electrical characterisation of n and plong channel mosfets and the first 0.1μm LDD SiGe nMOSFETs. Limited increased mobilities for buried channel transistors and reduced ones for surface channel mosfets are apparent.